[12524PC Stock]
- Nimewo Pati:
- IRFPG50
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 1000V 6.1A TO-247AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFPG50 electronic components. IRFPG50 can be shipped within 24 hours after order. If you have any demands for IRFPG50, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFPG50 Atribi pwodwi yo
Nimewo Pati :
IRFPG50
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 1000V 6.1A TO-247AC
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2 Ohm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
190nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
190W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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