DMN63D1LDW-13 Pricing (USD) [1192875PC Stock]
- 1 pcs$0.03101
- 10,000 pcs$0.02784
- Nimewo Pati:
- DMN63D1LDW-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 60V 0.25A SOT363.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN63D1LDW-13 electronic components. DMN63D1LDW-13 can be shipped within 24 hours after order. If you have any demands for DMN63D1LDW-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN63D1LDW-13 Atribi pwodwi yo
Nimewo Pati :
DMN63D1LDW-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 60V 0.25A SOT363
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
250mA
RD sou (Max) @ Id, Vgs :
2 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
0.3nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
30pF @ 25V
Pouvwa - Max :
310mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè :
SOT-23
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