DMTH6004LPSQ-13 Pricing (USD) [100619PC Stock]
- 1 pcs$0.38860
- 2,500 pcs$0.32397
- Nimewo Pati:
- DMTH6004LPSQ-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 60V 100A POWERDI5060.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Diodes - RF, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMTH6004LPSQ-13 electronic components. DMTH6004LPSQ-13 can be shipped within 24 hours after order. If you have any demands for DMTH6004LPSQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH6004LPSQ-13 Atribi pwodwi yo
Nimewo Pati :
DMTH6004LPSQ-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 60V 100A POWERDI5060
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
3.1 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
47.4nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4515pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.6W (Ta), 138W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerDI5060-8
Pake / Ka :
8-PowerTDFN
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