[56PC Stock]
- Nimewo Pati:
- IXTI10N60P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 600V 10A I2-PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Tiristors - SCR, Transistors - FETs, MOSFETs - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in IXYS IXTI10N60P electronic components. IXTI10N60P can be shipped within 24 hours after order. If you have any demands for IXTI10N60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTI10N60P Atribi pwodwi yo
Nimewo Pati :
IXTI10N60P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 600V 10A I2-PAK
Seri :
PolarHV™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
740 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1610pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
200W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-262 (I2PAK)
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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