Nimewo Pati :
JANS1N3595US
Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 200MA DO35
Seri :
Military, MIL-S-19500-241
Voltage - DC Ranvèse (Vr) (Max) :
-
Kouran - Mwayèn Rèktifye (Io) :
200mA (DC)
Voltage - Forward (Vf) (Max) @ Si :
1V @ 200mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
3µs
Kouran - Fèy Reverse @ Vr :
1nA @ 125V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
B, SQ-MELF
Operating Tanperati - Junction :
-65°C ~ 150°C