PMGD780SN,115 Pricing (USD) [1118677PC Stock]
- 1 pcs$0.05194
- 3,000 pcs$0.05168
- Nimewo Pati:
- PMGD780SN,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 60V 0.49A 6TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMGD780SN,115 electronic components. PMGD780SN,115 can be shipped within 24 hours after order. If you have any demands for PMGD780SN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMGD780SN,115 Atribi pwodwi yo
Nimewo Pati :
PMGD780SN,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET 2N-CH 60V 0.49A 6TSSOP
Seri :
TrenchMOS™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
490mA
RD sou (Max) @ Id, Vgs :
920 mOhm @ 300mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.05nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
23pF @ 30V
Pouvwa - Max :
410mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
6-TSSOP
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