IXYS - IXFT58N20Q TRL

KEY Part #: K6401290

[3102PC Stock]


    Nimewo Pati:
    IXFT58N20Q TRL
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 200V 58A TO268.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Single, Diodes - RF, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - RF and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in IXYS IXFT58N20Q TRL electronic components. IXFT58N20Q TRL can be shipped within 24 hours after order. If you have any demands for IXFT58N20Q TRL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXFT58N20Q TRL Atribi pwodwi yo

    Nimewo Pati : IXFT58N20Q TRL
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 200V 58A TO268
    Seri : HiPerFET™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 58A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 40 mOhm @ 29A, 10V
    Vgs (th) (Max) @ Id : 4V @ 4mA
    Chaje Gate (Qg) (Max) @ Vgs : 140nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 3600pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 300W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : TO-268 (IXFT)
    Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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