IXYS - IXYP20N65C3D1

KEY Part #: K6422063

IXYP20N65C3D1 Pricing (USD) [37110PC Stock]

  • 1 pcs$1.10930
  • 50 pcs$1.10378

Nimewo Pati:
IXYP20N65C3D1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 650V 18A 50W TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in IXYS IXYP20N65C3D1 electronic components. IXYP20N65C3D1 can be shipped within 24 hours after order. If you have any demands for IXYP20N65C3D1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXYP20N65C3D1 Atribi pwodwi yo

Nimewo Pati : IXYP20N65C3D1
Manifakti : IXYS
Deskripsyon : IGBT 650V 18A 50W TO220
Seri : GenX3™, XPT™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 50A
Kouran - Pèseptè batman (Icm) : 105A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 20A
Pouvwa - Max : 200W
Oblije chanje enèji : 430µJ (on), 350µJ (off)
Kalite Antre : Standard
Gate chaje : 30nC
Td (on / off) @ 25 ° C : 19ns/80ns
Kondisyon egzamen an : 400V, 20A, 20 Ohm, 15V
Ranvèse Tan Reverse (trr) : 135ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB