[3114PC Stock]
- Nimewo Pati:
- TSM4435BCS RLG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET P-CHANNEL 30V 9.1A 8SOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM4435BCS RLG electronic components. TSM4435BCS RLG can be shipped within 24 hours after order. If you have any demands for TSM4435BCS RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM4435BCS RLG Atribi pwodwi yo
Nimewo Pati :
TSM4435BCS RLG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET P-CHANNEL 30V 9.1A 8SOP
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
21 mOhm @ 9.1A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3.2nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1900pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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