IXYS - IXGP30N60B2

KEY Part #: K6424827

IXGP30N60B2 Pricing (USD) [33264PC Stock]

  • 1 pcs$1.30444
  • 50 pcs$1.29795

Nimewo Pati:
IXGP30N60B2
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 600V 70A 190W TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in IXYS IXGP30N60B2 electronic components. IXGP30N60B2 can be shipped within 24 hours after order. If you have any demands for IXGP30N60B2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXGP30N60B2 Atribi pwodwi yo

Nimewo Pati : IXGP30N60B2
Manifakti : IXYS
Deskripsyon : IGBT 600V 70A 190W TO220
Seri : HiPerFAST™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 70A
Kouran - Pèseptè batman (Icm) : 150A
Vce (sou) (Max) @ Vge, Ic : 1.8V @ 15V, 24A
Pouvwa - Max : 190W
Oblije chanje enèji : 320µJ (off)
Kalite Antre : Standard
Gate chaje : 66nC
Td (on / off) @ 25 ° C : 13ns/110ns
Kondisyon egzamen an : 400V, 24A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB