[4656PC Stock]
- Nimewo Pati:
- SI4967DY-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2P-CH 12V 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI4967DY-T1-GE3 electronic components. SI4967DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4967DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4967DY-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI4967DY-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2P-CH 12V 8SOIC
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
RD sou (Max) @ Id, Vgs :
23 mOhm @ 7.5A, 4.5V
Vgs (th) (Max) @ Id :
450mV @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
55nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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