Honeywell Aerospace - HTNFET-DC

KEY Part #: K6393002

HTNFET-DC Pricing (USD) [230PC Stock]

  • 1 pcs$214.11918

Nimewo Pati:
HTNFET-DC
Manifakti:
Honeywell Aerospace
Detaye deskripsyon:
MOSFET N-CH 55V 8-DIP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Honeywell Aerospace HTNFET-DC electronic components. HTNFET-DC can be shipped within 24 hours after order. If you have any demands for HTNFET-DC, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HTNFET-DC Atribi pwodwi yo

Nimewo Pati : HTNFET-DC
Manifakti : Honeywell Aerospace
Deskripsyon : MOSFET N-CH 55V 8-DIP
Seri : HTMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
RD sou (Max) @ Id, Vgs : 400 mOhm @ 100mA, 5V
Vgs (th) (Max) @ Id : 2.4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 4.3nC @ 5V
Vgs (Max) : 10V
Antre kapasite (Ciss) (Max) @ Vds : 290pF @ 28V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 50W (Tj)
Operating Tanperati : -
Mounting Kalite : Through Hole
Pake Aparèy Founisè : -
Pake / Ka : 8-CDIP Exposed Pad