Infineon Technologies - IRFB4610PBF

KEY Part #: K6411506

IRFB4610PBF Pricing (USD) [45618PC Stock]

  • 1 pcs$0.81948
  • 10 pcs$0.74171
  • 100 pcs$0.59604
  • 500 pcs$0.46359
  • 1,000 pcs$0.38412

Nimewo Pati:
IRFB4610PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 73A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFB4610PBF electronic components. IRFB4610PBF can be shipped within 24 hours after order. If you have any demands for IRFB4610PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFB4610PBF Atribi pwodwi yo

Nimewo Pati : IRFB4610PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 73A TO-220AB
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 73A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 14 mOhm @ 44A, 10V
Vgs (th) (Max) @ Id : 4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 140nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3550pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 190W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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