Nexperia USA Inc. - PSMN012-100YS,115

KEY Part #: K6420115

PSMN012-100YS,115 Pricing (USD) [161708PC Stock]

  • 1 pcs$0.22987
  • 1,500 pcs$0.22873

Nimewo Pati:
PSMN012-100YS,115
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 100V 60A LFPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Tiristors - TRIACs, Tiristors - SCR, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single and Diodes - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN012-100YS,115 Atribi pwodwi yo

Nimewo Pati : PSMN012-100YS,115
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 100V 60A LFPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 12 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 64nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3500pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 130W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LFPAK56, Power-SO8
Pake / Ka : SC-100, SOT-669