IXFH18N100Q3 Pricing (USD) [7800PC Stock]
- 1 pcs$6.10597
- 90 pcs$6.07559
- Nimewo Pati:
- IXFH18N100Q3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1000V 18A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXFH18N100Q3 electronic components. IXFH18N100Q3 can be shipped within 24 hours after order. If you have any demands for IXFH18N100Q3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH18N100Q3 Atribi pwodwi yo
Nimewo Pati :
IXFH18N100Q3
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1000V 18A TO-247
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
660 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
6.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
4890pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
830W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AD (IXFH)
Pake / Ka :
TO-247-3
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