Deskripsyon :
GAN TRANS ASYMMETRICAL HALF BRID
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.5A, 38A
RD sou (Max) @ Id, Vgs :
14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 2.5mA, 2.5V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs :
2.5nC @ 5V, 10nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
300pF @ 40V, 1100pF @ 40V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die