ON Semiconductor - FGB20N6S2D

KEY Part #: K6423376

[9674PC Stock]


    Nimewo Pati:
    FGB20N6S2D
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    IGBT 600V 28A 125W TO263AB.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF and Transistors - IGBTs - Arrays ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FGB20N6S2D electronic components. FGB20N6S2D can be shipped within 24 hours after order. If you have any demands for FGB20N6S2D, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FGB20N6S2D Atribi pwodwi yo

    Nimewo Pati : FGB20N6S2D
    Manifakti : ON Semiconductor
    Deskripsyon : IGBT 600V 28A 125W TO263AB
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 28A
    Kouran - Pèseptè batman (Icm) : 40A
    Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 7A
    Pouvwa - Max : 125W
    Oblije chanje enèji : 25µJ (on), 58µJ (off)
    Kalite Antre : Standard
    Gate chaje : 30nC
    Td (on / off) @ 25 ° C : 7.7ns/87ns
    Kondisyon egzamen an : 390V, 7A, 25 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 31ns
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Pake Aparèy Founisè : TO-263AB