CSD19502Q5B Pricing (USD) [85313PC Stock]
- 1 pcs$0.47120
- 2,500 pcs$0.46886
- Nimewo Pati:
- CSD19502Q5B
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET N-CH 80V 100A 8SON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - JFETs, Transistors - Bipolè (BJT) - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD19502Q5B electronic components. CSD19502Q5B can be shipped within 24 hours after order. If you have any demands for CSD19502Q5B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD19502Q5B Atribi pwodwi yo
Nimewo Pati :
CSD19502Q5B
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET N-CH 80V 100A 8SON
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
4.1 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id :
3.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
62nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4870pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta), 195W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-VSON-CLIP (5x6)
Pake / Ka :
8-PowerTDFN
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