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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDN302P

ON Semiconductor - FDN302P

KEY Part #: K6396570

FDN302P Pricing (USD) [547965PC Stock]

  • 1 pcs$0.06784
  • 3,000 pcs$0.06750
Nimewo Pati:
FDN302P
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 20V 2.4A SSOT3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDN302P electronic components. FDN302P can be shipped within 24 hours after order. If you have any demands for FDN302P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDN302P Atribi pwodwi yo

Nimewo Pati : FDN302P
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 20V 2.4A SSOT3
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 55 mOhm @ 2.4A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 882pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SuperSOT-3
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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