IXFX200N10P Pricing (USD) [9721PC Stock]
- 1 pcs$4.68680
- 30 pcs$4.66349
- Nimewo Pati:
- IXFX200N10P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 200A PLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXFX200N10P electronic components. IXFX200N10P can be shipped within 24 hours after order. If you have any demands for IXFX200N10P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX200N10P Atribi pwodwi yo
Nimewo Pati :
IXFX200N10P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 200A PLUS247
Seri :
HiPerFET™, PolarP2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
235nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
830W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PLUS247™-3
Pake / Ka :
TO-247-3
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