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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTK3043NT1G

ON Semiconductor - NTK3043NT1G

KEY Part #: K6420031

NTK3043NT1G Pricing (USD) [1383452PC Stock]

  • 1 pcs$0.02896
  • 4,000 pcs$0.02882
Nimewo Pati:
NTK3043NT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 20V 210MA SOT-723.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTK3043NT1G electronic components. NTK3043NT1G can be shipped within 24 hours after order. If you have any demands for NTK3043NT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTK3043NT1G Atribi pwodwi yo

Nimewo Pati : NTK3043NT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 20V 210MA SOT-723
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 210mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.65V, 4.5V
RD sou (Max) @ Id, Vgs : 3.4 Ohm @ 10mA, 4.5V
Vgs (th) (Max) @ Id : 1.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 11pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 310mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-723
Pake / Ka : SOT-723

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