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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FQPF7N80C

ON Semiconductor - FQPF7N80C

KEY Part #: K6417581

FQPF7N80C Pricing (USD) [35025PC Stock]

  • 1 pcs$1.17667
  • 1,000 pcs$0.34096
Nimewo Pati:
FQPF7N80C
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 800V 6.6A TO-220F.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Diodes - RF, Transistors - Objektif espesyal and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in ON Semiconductor FQPF7N80C electronic components. FQPF7N80C can be shipped within 24 hours after order. If you have any demands for FQPF7N80C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQPF7N80C Atribi pwodwi yo

Nimewo Pati : FQPF7N80C
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 800V 6.6A TO-220F
Seri : QFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.9 Ohm @ 3.3A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1680pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 56W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220F
Pake / Ka : TO-220-3 Full Pack

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