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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. EPC2025

EPC - EPC2025

KEY Part #: K6402385

[2722PC Stock]

    Nimewo Pati:
    EPC2025
    Manifakti:
    EPC
    Detaye deskripsyon:
    GAN TRANS 300V 150MO BUMPED DIE.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in EPC EPC2025 electronic components. EPC2025 can be shipped within 24 hours after order. If you have any demands for EPC2025, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    EPC2025 Atribi pwodwi yo

    Nimewo Pati : EPC2025
    Manifakti : EPC
    Deskripsyon : GAN TRANS 300V 150MO BUMPED DIE
    Seri : eGaN®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : GaNFET (Gallium Nitride)
    Drenaj nan Voltage Sous (Vdss) : 300V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
    RD sou (Max) @ Id, Vgs : 150 mOhm @ 3A, 5V
    Vgs (th) (Max) @ Id : 2.5V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : +6V, -4V
    Antre kapasite (Ciss) (Max) @ Vds : 194pF @ 240V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : -
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : Die
    Pake / Ka : Die
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