[467PC Stock]
- Nimewo Pati:
- IXCP01N90E
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 900V 0.25A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXCP01N90E electronic components. IXCP01N90E can be shipped within 24 hours after order. If you have any demands for IXCP01N90E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXCP01N90E Atribi pwodwi yo
Nimewo Pati :
IXCP01N90E
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 900V 0.25A TO-220
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
250mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
80 Ohm @ 50mA, 10V
Vgs (th) (Max) @ Id :
5V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
7.5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
133pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
40W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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