Microsemi Corporation - APTM120H29FG

KEY Part #: K6522643

APTM120H29FG Pricing (USD) [414PC Stock]

  • 1 pcs$147.39494
  • 10 pcs$140.27951
  • 25 pcs$135.19703

Nimewo Pati:
APTM120H29FG
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET 4N-CH 1200V 34A SP6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Transistors - Objektif espesyal and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APTM120H29FG electronic components. APTM120H29FG can be shipped within 24 hours after order. If you have any demands for APTM120H29FG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM120H29FG Atribi pwodwi yo

Nimewo Pati : APTM120H29FG
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET 4N-CH 1200V 34A SP6
Seri : POWER MOS 7®
Estati Pati : Active
FET Kalite : 4 N-Channel (H-Bridge)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 34A
RD sou (Max) @ Id, Vgs : 348 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 5V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs : 374nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 10300pF @ 25V
Pouvwa - Max : 780W
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP6
Pake Aparèy Founisè : SP6