Nimewo Pati :
APTM120H29FG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 4N-CH 1200V 34A SP6
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
34A
RD sou (Max) @ Id, Vgs :
348 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
5V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs :
374nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
10300pF @ 25V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP6