[2513PC Stock]
- Nimewo Pati:
- IRFH7185TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N CH 100V 19A 8QFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFH7185TRPBF electronic components. IRFH7185TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH7185TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH7185TRPBF Atribi pwodwi yo
Nimewo Pati :
IRFH7185TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N CH 100V 19A 8QFN
Seri :
FASTIRFET™, HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
19A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
5.2 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
3.6V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2320pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.6W (Ta), 160W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PQFN (5x6)
Pake / Ka :
8-PowerTDFN
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