Nimewo Pati :
SI4378DY-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 20V 19A 8-SOIC
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
19A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
2.7 mOhm @ 25A, 4.5V
Vgs (th) (Max) @ Id :
1.8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
55nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
8500pF @ 10V
Disipasyon Pouvwa (Max) :
1.6W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)