Vishay Siliconix - SI4378DY-T1-E3

KEY Part #: K6415736

SI4378DY-T1-E3 Pricing (USD) [92351PC Stock]

  • 1 pcs$0.42339
  • 2,500 pcs$0.33771

Nimewo Pati:
SI4378DY-T1-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 20V 19A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Siliconix SI4378DY-T1-E3 electronic components. SI4378DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4378DY-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4378DY-T1-E3 Atribi pwodwi yo

Nimewo Pati : SI4378DY-T1-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 20V 19A 8-SOIC
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 2.7 mOhm @ 25A, 4.5V
Vgs (th) (Max) @ Id : 1.8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 55nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 8500pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.6W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SO
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)