Infineon Technologies - BSP299H6327XUSA1

KEY Part #: K6416807

BSP299H6327XUSA1 Pricing (USD) [140209PC Stock]

  • 1 pcs$0.26380
  • 1,000 pcs$0.20158

Nimewo Pati:
BSP299H6327XUSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 500V 0.4A SOT-223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSP299H6327XUSA1 Atribi pwodwi yo

Nimewo Pati : BSP299H6327XUSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 500V 0.4A SOT-223
Seri : SIPMOS®
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 400mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4 Ohm @ 400mA, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.8W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-SOT223-4
Pake / Ka : TO-261-4, TO-261AA

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