Nimewo Pati :
BSP299H6327XUSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 500V 0.4A SOT-223
Estati Pati :
Not For New Designs
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
400mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4 Ohm @ 400mA, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
400pF @ 25V
Disipasyon Pouvwa (Max) :
1.8W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-SOT223-4
Pake / Ka :
TO-261-4, TO-261AA