SUP60030E-GE3 Pricing (USD) [26720PC Stock]
- 1 pcs$1.49397
- 10 pcs$1.33312
- 100 pcs$1.03710
- 500 pcs$0.83980
- 1,000 pcs$0.70826
- Nimewo Pati:
- SUP60030E-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 80V 120A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SUP60030E-GE3 electronic components. SUP60030E-GE3 can be shipped within 24 hours after order. If you have any demands for SUP60030E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUP60030E-GE3 Atribi pwodwi yo
Nimewo Pati :
SUP60030E-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 80V 120A TO220AB
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
7.5V, 10V
RD sou (Max) @ Id, Vgs :
3.4 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
141nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7910pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
375W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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