NXP USA Inc. - BUK761R7-40E/GFJ

KEY Part #: K6399995

[3551PC Stock]


    Nimewo Pati:
    BUK761R7-40E/GFJ
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Diodes - RF and Transistors - FETs, MOSFETs - RF ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. BUK761R7-40E/GFJ electronic components. BUK761R7-40E/GFJ can be shipped within 24 hours after order. If you have any demands for BUK761R7-40E/GFJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BUK761R7-40E/GFJ Atribi pwodwi yo

    Nimewo Pati : BUK761R7-40E/GFJ
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH D2PAK
    Seri : *
    Estati Pati : Obsolete
    FET Kalite : -
    Teknoloji : -
    Drenaj nan Voltage Sous (Vdss) : -
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : -
    Vgs (th) (Max) @ Id : -
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : -
    Operating Tanperati : -
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D2PAK
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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