ON Semiconductor - NVMFS6H864NT1G

KEY Part #: K6397283

NVMFS6H864NT1G Pricing (USD) [214434PC Stock]

  • 1 pcs$0.17249

Nimewo Pati:
NVMFS6H864NT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
T8 80V SO8FL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - RF, Tiristors - SCR, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Transistors - JFETs and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFS6H864NT1G Atribi pwodwi yo

Nimewo Pati : NVMFS6H864NT1G
Manifakti : ON Semiconductor
Deskripsyon : T8 80V SO8FL
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.7A (Ta), 21A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 32 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 4V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs : 6.9nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 370pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.5W (Ta), 33W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)
Pake / Ka : 8-PowerTDFN, 5 Leads