C2M0160120D Pricing (USD) [10686PC Stock]
- 1 pcs$3.85612
- Nimewo Pati:
- C2M0160120D
- Manifakti:
- Cree/Wolfspeed
- Detaye deskripsyon:
- MOSFET N-CH 1200V 19A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Cree/Wolfspeed C2M0160120D electronic components. C2M0160120D can be shipped within 24 hours after order. If you have any demands for C2M0160120D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
C2M0160120D Atribi pwodwi yo
Nimewo Pati :
C2M0160120D
Manifakti :
Cree/Wolfspeed
Deskripsyon :
MOSFET N-CH 1200V 19A TO-247
Seri :
Z-FET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
19A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
196 mOhm @ 10A, 20V
Vgs (th) (Max) @ Id :
2.5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
32.6nC @ 20V
Vgs (Max) :
+25V, -10V
Antre kapasite (Ciss) (Max) @ Vds :
527pF @ 800V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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