Rohm Semiconductor - RDX050N50FU6

KEY Part #: K6408411

[637PC Stock]


    Nimewo Pati:
    RDX050N50FU6
    Manifakti:
    Rohm Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 500V 5A TO-220FM.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Diodes - Zener - Single, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays and Modil pouvwa chofè ...
    Avantaj konpetitif:
    We specialize in Rohm Semiconductor RDX050N50FU6 electronic components. RDX050N50FU6 can be shipped within 24 hours after order. If you have any demands for RDX050N50FU6, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RDX050N50FU6 Atribi pwodwi yo

    Nimewo Pati : RDX050N50FU6
    Manifakti : Rohm Semiconductor
    Deskripsyon : MOSFET N-CH 500V 5A TO-220FM
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 2.5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 500pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 35W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220FM
    Pake / Ka : TO-220-3 Full Pack

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