[13390PC Stock]
- Nimewo Pati:
- 2SK1859-E
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 900V 6A TO-3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America 2SK1859-E electronic components. 2SK1859-E can be shipped within 24 hours after order. If you have any demands for 2SK1859-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK1859-E Atribi pwodwi yo
Nimewo Pati :
2SK1859-E
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 900V 6A TO-3P
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
980pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
60W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P
Pake / Ka :
TO-3P-3, SC-65-3
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