Nimewo Pati :
SQJ244EP-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET DUAL N-CHA 40V PPAK SO-8L
Seri :
Automotive, AEC-Q101, TrenchFET®
FET Kalite :
2 N-Channel (Dual) Asymmetrical
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc), 60A (Tc)
RD sou (Max) @ Id, Vgs :
11 mOhm @ 4A, 10V, 4.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V, 45nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1200pF @ 25V, 2800pF @ 25V
Pouvwa - Max :
27W (Tc), 48W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SO-8 Dual
Pake Aparèy Founisè :
PowerPAK® SO-8 Dual Asymmetric