Nimewo Pati :
SQ4917EY-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2 P-CHANNEL 60V 8A 8SO
Seri :
Automotive, AEC-Q101, TrenchFET®
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Tc)
RD sou (Max) @ Id, Vgs :
48 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
65nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1910pF @ 30V
Operating Tanperati :
-55°C ~ 175°C (TA)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO