Vishay Siliconix - SQ4917EY-T1_GE3

KEY Part #: K6525152

SQ4917EY-T1_GE3 Pricing (USD) [98339PC Stock]

  • 1 pcs$0.39761
  • 2,500 pcs$0.31715

Nimewo Pati:
SQ4917EY-T1_GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2 P-CHANNEL 60V 8A 8SO.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Siliconix SQ4917EY-T1_GE3 electronic components. SQ4917EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4917EY-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ4917EY-T1_GE3 Atribi pwodwi yo

Nimewo Pati : SQ4917EY-T1_GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2 P-CHANNEL 60V 8A 8SO
Seri : Automotive, AEC-Q101, TrenchFET®
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
RD sou (Max) @ Id, Vgs : 48 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 65nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1910pF @ 30V
Pouvwa - Max : 5W (Tc)
Operating Tanperati : -55°C ~ 175°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO