IPL65R660E6AUMA1 Pricing (USD) [2912PC Stock]
- 3,000 pcs$0.29583
- Nimewo Pati:
- IPL65R660E6AUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 4VSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - RF, Tiristors - SCR, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPL65R660E6AUMA1 electronic components. IPL65R660E6AUMA1 can be shipped within 24 hours after order. If you have any demands for IPL65R660E6AUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPL65R660E6AUMA1 Atribi pwodwi yo
Nimewo Pati :
IPL65R660E6AUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 4VSON
Seri :
CoolMOS™ E6
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
660 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
440pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
63W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Thin-Pak (8x8)
Pake / Ka :
4-PowerTSFN
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