IXFK20N120 Pricing (USD) [5591PC Stock]
- 1 pcs$8.56567
- 25 pcs$8.52305
- Nimewo Pati:
- IXFK20N120
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1200V 20A TO-264.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXFK20N120 electronic components. IXFK20N120 can be shipped within 24 hours after order. If you have any demands for IXFK20N120, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFK20N120 Atribi pwodwi yo
Nimewo Pati :
IXFK20N120
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1200V 20A TO-264
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
750 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
160nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
7400pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
780W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-264AA (IXFK)
Pake / Ka :
TO-264-3, TO-264AA
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