IPSA70R1K4P7SAKMA1 Pricing (USD) [126380PC Stock]
- 1 pcs$0.29267
- Nimewo Pati:
- IPSA70R1K4P7SAKMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET COOLMOS 700V TO251-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Transistors - JFETs, Diodes - RF and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPSA70R1K4P7SAKMA1 electronic components. IPSA70R1K4P7SAKMA1 can be shipped within 24 hours after order. If you have any demands for IPSA70R1K4P7SAKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPSA70R1K4P7SAKMA1 Atribi pwodwi yo
Nimewo Pati :
IPSA70R1K4P7SAKMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET COOLMOS 700V TO251-3
Seri :
CoolMOS™ P7
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.4 Ohm @ 700mA, 10V
Vgs (th) (Max) @ Id :
3.5V @ 40µA
Chaje Gate (Qg) (Max) @ Vgs :
4.7nC @ 400V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
158pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
22.7W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO251-3
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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