Infineon Technologies - IPD60R600E6ATMA1

KEY Part #: K6420001

IPD60R600E6ATMA1 Pricing (USD) [150876PC Stock]

  • 1 pcs$0.24515
  • 2,500 pcs$0.23931

Nimewo Pati:
IPD60R600E6ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 600V 7.3A TO252.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - TRIACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD60R600E6ATMA1 Atribi pwodwi yo

Nimewo Pati : IPD60R600E6ATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 600V 7.3A TO252
Seri : CoolMOS™ E6
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 600 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs : 20.5nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 440pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 63W (Tc)
Operating Tanperati : -
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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