Microsemi Corporation - APT35GN120L2DQ2G

KEY Part #: K6421912

APT35GN120L2DQ2G Pricing (USD) [7188PC Stock]

  • 1 pcs$5.73351
  • 10 pcs$5.16104
  • 25 pcs$4.70245
  • 100 pcs$4.24368
  • 250 pcs$3.89958
  • 500 pcs$3.55550

Nimewo Pati:
APT35GN120L2DQ2G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 1200V 94A 379W TO264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT35GN120L2DQ2G Atribi pwodwi yo

Nimewo Pati : APT35GN120L2DQ2G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 1200V 94A 379W TO264
Seri : -
Estati Pati : Active
Kalite IGBT : NPT, Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 94A
Kouran - Pèseptè batman (Icm) : 105A
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 35A
Pouvwa - Max : 379W
Oblije chanje enèji : 2.315mJ (off)
Kalite Antre : Standard
Gate chaje : 220nC
Td (on / off) @ 25 ° C : 24ns/300ns
Kondisyon egzamen an : 800V, 35A, 2.2 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-264-3, TO-264AA
Pake Aparèy Founisè : -