[13110PC Stock]
- Nimewo Pati:
- SPN01N60C3
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 650V 0.3A SOT-223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Diodes - Zener - Single and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies SPN01N60C3 electronic components. SPN01N60C3 can be shipped within 24 hours after order. If you have any demands for SPN01N60C3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPN01N60C3 Atribi pwodwi yo
Nimewo Pati :
SPN01N60C3
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 650V 0.3A SOT-223
Seri :
CoolMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
3.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
100pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.8W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-SOT223-4
Pake / Ka :
TO-261-4, TO-261AA
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