Infineon Technologies - IRF5802TR

KEY Part #: K6413387

[13117PC Stock]


    Nimewo Pati:
    IRF5802TR
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 150V 0.9A 6-TSOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRF5802TR electronic components. IRF5802TR can be shipped within 24 hours after order. If you have any demands for IRF5802TR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF5802TR Atribi pwodwi yo

    Nimewo Pati : IRF5802TR
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 150V 0.9A 6-TSOP
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 150V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 900mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 1.2 Ohm @ 540mA, 10V
    Vgs (th) (Max) @ Id : 5.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 6.8nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 88pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : Micro6™(TSOP-6)
    Pake / Ka : SOT-23-6 Thin, TSOT-23-6

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