[13117PC Stock]
- Nimewo Pati:
- IRF5802TR
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 150V 0.9A 6-TSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF5802TR electronic components. IRF5802TR can be shipped within 24 hours after order. If you have any demands for IRF5802TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5802TR Atribi pwodwi yo
Nimewo Pati :
IRF5802TR
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 150V 0.9A 6-TSOP
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
900mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.2 Ohm @ 540mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.8nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
88pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Micro6™(TSOP-6)
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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