[1185PC Stock]
- Nimewo Pati:
- BSO130N03MSGXUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 9A 8DSO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSO130N03MSGXUMA1 electronic components. BSO130N03MSGXUMA1 can be shipped within 24 hours after order. If you have any demands for BSO130N03MSGXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO130N03MSGXUMA1 Atribi pwodwi yo
Nimewo Pati :
BSO130N03MSGXUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 9A 8DSO
Seri :
OptiMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
13 mOhm @ 11.1A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1300pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.56W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-DSO-8
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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