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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APTM50UM19SG

Microsemi Corporation - APTM50UM19SG

KEY Part #: K6413161

[13196PC Stock]

    Nimewo Pati:
    APTM50UM19SG
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    MOSFET N-CH 500V 163A J3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - RF, Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation APTM50UM19SG electronic components. APTM50UM19SG can be shipped within 24 hours after order. If you have any demands for APTM50UM19SG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTM50UM19SG Atribi pwodwi yo

    Nimewo Pati : APTM50UM19SG
    Manifakti : Microsemi Corporation
    Deskripsyon : MOSFET N-CH 500V 163A J3
    Seri : -
    Estati Pati : Discontinued at Digi-Key
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 163A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 19 mOhm @ 81.5A, 10V
    Vgs (th) (Max) @ Id : 5V @ 10mA
    Chaje Gate (Qg) (Max) @ Vgs : 492nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 22400pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1136W (Tc)
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake Aparèy Founisè : Module
    Pake / Ka : J3 Module

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