Nimewo Pati :
SIHU6N62E-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 620V 6A TO-251
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
620V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
900 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
34nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
578pF @ 100V
Disipasyon Pouvwa (Max) :
78W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
IPAK (TO-251)
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA