STMicroelectronics - STW56N65M2-4

KEY Part #: K6416538

STW56N65M2-4 Pricing (USD) [15114PC Stock]

  • 1 pcs$3.95749
  • 10 pcs$3.56130
  • 100 pcs$2.92814
  • 500 pcs$2.45330
  • 1,000 pcs$2.13675

Nimewo Pati:
STW56N65M2-4
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 650V I2PAKFP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in STMicroelectronics STW56N65M2-4 electronic components. STW56N65M2-4 can be shipped within 24 hours after order. If you have any demands for STW56N65M2-4, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STW56N65M2-4 Atribi pwodwi yo

Nimewo Pati : STW56N65M2-4
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 650V I2PAKFP
Seri : MDmesh™ M2
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 49A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 62 mOhm @ 24.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 93nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 3900pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 358W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247-4L
Pake / Ka : TO-247-4

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