Nimewo Pati :
STW56N65M2-4
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 650V I2PAKFP
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
49A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
62 mOhm @ 24.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
93nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
3900pF @ 100V
Disipasyon Pouvwa (Max) :
358W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-4L