C2M0080120D Pricing (USD) [5343PC Stock]
- 1 pcs$7.71225
- Nimewo Pati:
- C2M0080120D
- Manifakti:
- Cree/Wolfspeed
- Detaye deskripsyon:
- MOSFET N-CH 1200V 31.6A TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Cree/Wolfspeed C2M0080120D electronic components. C2M0080120D can be shipped within 24 hours after order. If you have any demands for C2M0080120D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
C2M0080120D Atribi pwodwi yo
Nimewo Pati :
C2M0080120D
Manifakti :
Cree/Wolfspeed
Deskripsyon :
MOSFET N-CH 1200V 31.6A TO247
Seri :
C2M™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
98 mOhm @ 20A, 20V
Vgs (th) (Max) @ Id :
4V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs :
62nC @ 5V
Vgs (Max) :
+25V, -10V
Antre kapasite (Ciss) (Max) @ Vds :
950pF @ 1000V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
192W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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