Rohm Semiconductor - RS1G300GNTB

KEY Part #: K6403456

RS1G300GNTB Pricing (USD) [113220PC Stock]

  • 1 pcs$0.34825
  • 2,500 pcs$0.34652

Nimewo Pati:
RS1G300GNTB
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET N-CH 40V 30A 8HSOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor RS1G300GNTB electronic components. RS1G300GNTB can be shipped within 24 hours after order. If you have any demands for RS1G300GNTB, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS1G300GNTB Atribi pwodwi yo

Nimewo Pati : RS1G300GNTB
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET N-CH 40V 30A 8HSOP
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 2.5 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 56.8nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4230pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3W (Ta), 35W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-HSOP
Pake / Ka : 8-PowerTDFN