STMicroelectronics - STP12NM60N

KEY Part #: K6415608

[12351PC Stock]


    Nimewo Pati:
    STP12NM60N
    Manifakti:
    STMicroelectronics
    Detaye deskripsyon:
    MOSFET N-CH 600V 10A TO-220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR and Tiristors - DIACs, SIDACs ...
    Avantaj konpetitif:
    We specialize in STMicroelectronics STP12NM60N electronic components. STP12NM60N can be shipped within 24 hours after order. If you have any demands for STP12NM60N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STP12NM60N Atribi pwodwi yo

    Nimewo Pati : STP12NM60N
    Manifakti : STMicroelectronics
    Deskripsyon : MOSFET N-CH 600V 10A TO-220
    Seri : MDmesh™ II
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 600V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 410 mOhm @ 5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 30.5nC @ 10V
    Vgs (Max) : ±25V
    Antre kapasite (Ciss) (Max) @ Vds : 960pF @ 50V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 90W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220AB
    Pake / Ka : TO-220-3